光电 photoMOS 继电器,带 MOSFET 输出级。
应用:电话和通信设备或高速通信系统。
Technical specifications | |
Configuration of contacts: | 1 N/O |
Common input characteristics: | |
Operating current | - type E: 1.1 mA / - EH type: 1.6 mA |
LED off current: | 1 μA |
LED overload current: | 50mA |
LED nominal voltage: | 1.14 V |
LED reverse voltage: | 3 V |
Peak current: | 1A |
Rated dissipation: | 75 mW |
Common output characteristics: | |
Voltage: | 350 VAC / DC |
Current | 130 mA |
Power: | 500 mW |
Response time (ton / toff): | 0.5 / 0.05 ms |
Input/output capacity: | 0.8 pF |
Input/output insulation resistance: | 1000MΩ |
Thermal EMF: | 1 μV |
Operating temperature: | –20°C to +85°C |
UL 和 CSA