Infineon IRG4PF50WDPBF N沟道 IGBT, 51 A, Vce=900 V, 3引脚 TO-247AC封装

IGBT 900V 51A 200W TO247AC

RoHS: Compliant | pbFree: Yes

IGBT Transistors 900V Warp 20-100kHz

RoHS: Compliant

IGBT

IGBT

Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC (Alt: IRG4PF50WDPBF)

RoHS: Compliant

Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC (Alt: IRG4PF50WDPBF)

RoHS: Compliant

Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRG4PF50WDPBF)

RoHS: Compliant

Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube

RoHS: Compliant

Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube

RoHS: Compliant

Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube

Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube

IGBT, 900V, 51A, TO-247AC

IRG4PF50WDPBF Series 900 V 28 A N-Channel UltraFast IGBT - TO-247AC

RoHS: Compliant | pbFree: Yes

900V WARP 20-100 KHZ COPACK IGBT IN A TO-247AC PACKAGE

RoHS: Compliant

IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.7 V Current release time: 190 ns Power dissipation: 200 W

Transistor: IGBT, 900V, 51A, 200W, TO247-3