多层半导体陶瓷构造
由半导体陶瓷制成
额定电压(18 V 直流),适用于集成电路保护
提供双向电压钳位
达到 ESD (IEC-1000-4-2) 等级
Technical specification | ||
Stock no. | Typical ESD Clamp Voltage @ 25°C (Human Body Model, IEC-1000-40-2) | |
8kV Contact1 | 15k V Air2 | |
264-7443 | <140V Peak | <85V Peak |
264-7459 | <95V Peak | <75V Peak |
264-7465 | <75V Peak | <65V Peak |
1Direct Discharge To Device Terminals (IEC Preferred Test Method) | ||
2Corona Discharge Through Air (Represents Actual ESD Event) |
Max. Continuous Working Voltage | 18Vdc (-55 to +125°C) |
Nominal Voltage (VNOM @ 1mA d.c.) | 22V (Min.), 28V (Max.) |
Maximum Leakage (IL max.) | 0.1μA @ 3.5V d.c., 0.3μA @ 5.5V d.c. 5.0μA @ 15V d.c., 25μA @ 18V d.c. |